BCR 108 E6433 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: Infineon Technologies BCR 108 E6433
- Input Resistor: 2.2kΩ
- Resistor Ratio: 0.047
- Transistor Type: 1 NPN - Pre Biased
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 200mW
- Transition Frequency (fT): 170MHz
- DC Current Gain (hFE@Ic,Vce): -
- Input Voltage (VI(on)@Ic,Vce): 500mV@2mA,300mV
- Output Voltage (VO(on)@Io/Ii): -
- Input Voltage (VI(off)@Ic,Vce): 800mV@100uA,5V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,500uA
- Package: SOT-23
- Manufacturer: Infineon Technologies
